200mm/8-inch GaN-on-Si epitaxy is challenging and requires carefully-designed buffers for stress engineering to enable high breakdown voltage and avoid formation of cracks and slip line. Next to this, the buffer needs to be dispersion free.
With more than 3,000 200mm GaN-on-Si wafers processed per year, we explore and optimize buffer architectures for 200mm/8-inch GaN-on-Si epitaxy. Our state-of-the-art dispersion free buffers feature excellent surface morphology, good reproducibility, is dispersion free and has low vertical leakage current both at RT and at 150C.
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Some examples of what we have done
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You could be one of these builders. Whether you are an engineer or an operator, a consultant or PhD student, we need a versatile group of people to help us create positive change.Join the forward thinkers
Voltijds junior onderzoeker: prototyping and development for digital interactive products (IoT)
De imec onderzoeksgroep voor media, innovatie en communicatietechnologieën (Universiteit Gent) zoekt een voltijds onderzoeker op junior niveau (bursaalstatuut) om te beginnen in mei 2018 voor 12 maanden (verlengbaar) in het kader van projectmatig onderzoek naar de ontwikkeling van slimme interactie…
PhD researcher on patterning of metals and metallic alloys for future nano-interconnects
Post-doc position on emerging technologies for Internet of Things (IoT) networking
For further development of the IDLab wireless research cluster, we are looking for a post-doctoral researcher in the broad domain of wireless communications and networking for Internet of Things.
Postdoc Researcher GaN Reliability
Address the performance and reliability issues related to co-integration of diodes and HEMT devices as our Post doc on Performance and Reliability of GaN-IC’s.More job opportunities