Get our latest breakthroughs in display technologies and image sensor innovations for consumer electronics
Organized by the Korean Information Display Society (KIDS) and the Society for Information Display (SID), the 21st International Meeting on Information Display (IMID 2021) is a premier conference for leading researchers from academia and industry to share their cutting-edge results and knowledge on the information display. And that’s precisely why four top experts turned up to share imec’s latest breakthroughs and developments.
Perovskite light-emitting diodes with good quantum efficiency at current densities of kA/cm2”, presented by Paul Heremans, Vice-President Research and Fellow, imec
We investigate the potential for perovskite light-emitting diodes to reach high brightness operation. To reach high brightness, it is required to achieve good EQE (external quantum efficiency) at high current densities. In state-of-the-art, perovskite LEDs have already shown excellent EQE (>10%), but usually only at low current densities of 1 to 10 mA/cm2. At current densities exceeding 100 mA/cm2, they typically exhibit EQE roll-off. In our work, we investigate the root cause of this EQE roll-off, and we will show some ways to mitigate it. As a result, we achieve good EQE at current densities up to the level of kA/cm2.
Technology developments in FMM-free direct R-G-B smart OLED pixels, presented by Tung-Huei Ke, R&D Project Manager and Senior Scientist, imec
High-resolution display plays an essential role in the coming VR and AR applications. Resolution, power efficiency, and brightness are crucial features for the next generation of wearable devices. Photolithography has been employed in semiconductor development for decades to create high-resolution patterns. Although it was considered a challenge to apply photolithography to pattern organic semiconductors for OLED applications for the incompatibility of chemistry and process environment, imec and its partners have been continuously working on patterning OLEDs by photolithography. This presentation shows our OLED patterning technology development toward high-resolution FMM-free direct R-G-B OLED displays. Because of the resolution of photoresist, high aperture ratio, and high-resolution multicolor OLED pixel arrays are demonstrated. We illustrate an integration route toward R-G-B side-by-side by photolithographic patterning. We investigate the possible extrinsic degradation mechanisms in photolithographic patterned OLEDs. Efforts have been made in OLED stacks, process steps, process environment, and photoresist to mitigate the potential OLED degradations to show the progress in patterned OLED lifetime.
Design Considerations for µLED Displays, presented by Kris Myny, Principal Member of the Technical Staff and R&D Team Leader, imec
In the past years, micro light-emitting diodes (µLEDs) have made an impressive entrance into the display industry. Nevertheless, µLEDs introduce new challenges to the state-of-the-art (SOTA) electronics design. Different design approaches for µLED are currently pursued, one starting from light-emitting diode (LED) walls and one starting from active-matrix organic LED (AMOLED) design. In this work, we discuss these different approaches, and we propose a hybrid approach. We can tackle these challenges by combining the best part of different approaches in a new pixel circuit.
Thin-Film Photodetectors Enabling Infrared Vision in Future Consumer Devices, presented by Paweł E. Malinowski, Program Manager, imec
Image sensor innovations have been propelling the adoption of billions of cameras in consumer devices. Silicon-based imagers are perfect for the visible range (to reproduce human vision). They are also constantly improving in the near-infrared range (especially at 940 nm used in sensors with active illumination). Imaging further in the spectrum, in the short-wave infrared (SWIR) range, promises several benefits: lower background (better contrast), augmented vision (seeing through fog/smoke/clouds), material identification (e.g., water content), and low-light visibility (e.g., night vision). The fundamental limit of the Si bandgap forces the search for alternative absorber materials. Thin-film photodetectors (TFPD) are proposed as an affordable and better scalable alternative to III-V materials such as InGaAs. Monolithic integration enables small pixel size, high resolution, and industrial throughput while providing sufficient sensitivity for many applications.