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Develop next-generation power devices by monolithically integrating gallium nitride on silicon (GaN-on-Si) technology on your chip.

GaN-on-IC development

<h5>GaN-IC design</h5>

Build smaller power converters with stronger performance.

<h5>GaN-IC prototyping</h5>

Enjoy affordable access to GaN technology through imec's MPW service.

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GaN-based devices for advanced RF applications

Hao Yu

Bertrand Parvais

Study unveils the mechanism behind ion implantation isolation of GaN HEMTs.

<a class="btn" href="/en/expertise/connectivity-technology/stay-top-imecs-beyond-5g-activities">Keep me informed about imec's beyond 5G activities</a>

Research update

Gallium-nitride (GaN) based devices integrated with GaN-on-silicon (GaN-on-Si) technology are expected to play an important role in RF/lower mmWave mobile communication.

Optimizing the devices for this application requires several technology innovations, which may be backed by a better understanding of the physics behind their operation.

In this article, Hao Yu, a researcher at imec, and Bertrand Parvais, a principal member of technical staff at imec, shed light on one of the process steps in the integration flow of GaN high-electron-mobility transistors (HEMTs): the technique of ion implantation used to isolate neighboring GaN HEMTs electrically.

With their study, the authors illustrate the significance of modeling activities to complement technology development for taking GaN-based devices to a higher level of maturity.

GaN-based devices for advanced RF applications: a technology building block in the spotlight

Stefaan Decoutere

The successful cointegration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a 200V GaN-in-SOI power IC

Most GaN power systems today are formed from multiple chips which affects the performance of GaN devices.&nbsp;

The best way to exploit the superior switching speed of GaN power ICs is to integrate all components on the same chip.

Imec has already made tremendous progress monolithically integrating building blocks on a silicon-on-insulator (SOI) substrate such as drivers, half bridges, and control/protection circuits.

Stefaan Decoutere talks about the latest additions to the portfolio: d-mode HEMTs and Schottky barrier diodes.

Monolithic integration of GaN components boosts power integrated circuits

Jade Liu

The addition of these components will boost the performance of GaN power systems.

Imec demonstrates successful monolithic integration of Schottky diodes and depletion-mode HEMTs with 200 V GaN-IC 

Contest aims to stimulate innovation in power electronics, leveraging GaN technology to create higher power, smaller and faster components that increase devices’ power density

Imec and EUROPRACTICE announce winners of 2021 GaN-IC technology design contest 

This breakthrough result paves the way for GaN to enter into the SiC high voltage domain

Imec and AIXTRON Demonstrate 200 mm GaN Epitaxy on AIX G5+ C for 1200V Applications with Breakdown in Excess of 1800V

Towards monolithically integrated all-GaN power ICs 

Hanne Degans

Imec demonstrates fully monolithical co-integration of GaN half-bridge with drivers

Imec paves the way to boosting GaN performance and enabling true GaN-IC technology

Steve Stoffels

European ‘HiPERFORM’ to introduce wide-bandgap power electronics in next-generation electric cars.

A new generation of power electronics will make electric cars more efficient and cheap

Nicolo Ronchi&nbsp;

Imec and UTAC have developed a unique process for the wafer thinning and backside metallization of highly stressed GaN-on-200mm Si wafers. This has resulted in a packaged 650V GaN device – smaller than state-of-the-art.

Packaging solution for GaN-on-200mm Si power devices

Achievement paves the way to GaN power technology at high voltages above 650V

Imec and Qromis Present High Performance p-GaN HEMTs on 200mm CTE-matched Substrates

Imec World-First to Develop 200V and 650V dispersion free normally-off/e-mode Power Devices on 200mm/8-inch Si Wafers

First time demonstration of fully isolated GaN power devices using SOI technology.

First time demonstration of fully isolated GaN power devices using SOI technology

Radiation hardness of e-mode devices confirm maturity of imec’s 200mm GaN-on-Si platform

GaN-on-IC development

GaN-IC design

GaN-IC prototyping

GaN-based devices for advanced RF applications

Monolithic integration of GaN components boosts power integrated circuits

Imec demonstrates successful monolithic integration of Schottky diodes and depletion-mode HEMTs with 200 V GaN-IC

Imec and EUROPRACTICE announce winners of 2021 GaN-IC technology design contest

Imec and AIXTRON Demonstrate 200 mm GaN Epitaxy on AIX G5+ C for 1200V Applications with Breakdown in Excess of 1800V

Towards monolithically integrated all-GaN power ICs

Imec paves the way to boosting GaN performance and enabling true GaN-IC technology

A new generation of power electronics will make electric cars more efficient and cheap

Packaging solution for GaN-on-200mm Si power devices

Imec and Qromis Present High Performance p-GaN HEMTs on 200mm CTE-matched Substrates

Imec World-First to Develop 200V and 650V dispersion free normally-off/e-mode Power Devices on 200mm/8-inch Si Wafers

First time demonstration of fully isolated GaN power devices using SOI technology

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GaN-on-IC development

GaN-IC design

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GaN-based devices for advanced RF applications

Monolithic integration of GaN components boosts power integrated circuits

Imec demonstrates successful monolithic integration of Schottky diodes and depletion-mode HEMTs with 200 V GaN-IC

Imec and EUROPRACTICE announce winners of 2021 GaN-IC technology design contest

Imec and AIXTRON Demonstrate 200 mm GaN Epitaxy on AIX G5+ C for 1200V Applications with Breakdown in Excess of 1800V

Towards monolithically integrated all-GaN power ICs

Imec paves the way to boosting GaN performance and enabling true GaN-IC technology

A new generation of power electronics will make electric cars more efficient and cheap

Packaging solution for GaN-on-200mm Si power devices

Imec and Qromis Present High Performance p-GaN HEMTs on 200mm CTE-matched Substrates

Imec World-First to Develop 200V and 650V dispersion free normally-off/e-mode Power Devices on 200mm/8-inch Si Wafers

First time demonstration of fully isolated GaN power devices using SOI technology