PhD - Leuven | More than two weeks ago
While fundamental research keeps providing new device insights and understanding in material processing, the potential application space for 2D-materials is still expanding [D. Akinwande et al., Nature573,507–518 (2019)]. Ab-initio modelling predicts semi-conducting transitionmetal dichalocogenides (TMD) being interesting candidate materials for transistors with ultimate gate length scaling [A. Afzalian et al, SISPAD (2019)]. Additionally, Si-inspired nanosheet device architectures using 2D material channels are being investigated [Ahmed et al, IEDM 2020]. Yet, at the same time, the physics of 2D devices is fundamentally different than that of materials which have bulk behavior. Interactions are much stronger, and materials parameters a strong function of their environment. In fact, when using 2D semiconductors, the interface is the material! This profoundly changes the way one needs to think and reason about how to use 2D devices in a digital logic context, when compared to conventional Si CMOS scaling.
The goal of this project is therefore to explore the application space for 2D-materials in the context of technology scaling in general, and making the link to the materials science and transport physics in these devices. What type of electrical devices can be engineered with 2D-material channels? How thick should the 2D layers be to limit or control environmental effects? How do interfaces need to be cleaned and engineered, and can they be used to positively affect the transport physics? What are their unique features that could be exploited, compared to Si devices? And, finally, how do they compare against their state-of-the-art silicon counterparts?
This interdisciplinary work requires the PhD candidate to truly bridge the gap between fundamental
physics (quantum transport, hot electron transport, ...), device modeling and
possibly reliability and circuit level electronics and computer architectures. Strong interactions with the materials and characterization groups at
imec and with outside collaborators will be of paramount importance to enable
the candidate to effectively learn about and understand these materials in
order to use them in creative and novel ways. Interfacing with design and
computer architecture groups will be important to understand the relevant
parameter space and properly guide the design process from a potential
application level as well.
At imec, we have a large expert team with various backgrounds in materials and process development, 300 mm and lab integration, device learning and modelling. You will be part of the device and technology exploration team with strong links to both integration and modeling. 80% of the work will be modeling, 20% literature.
Required background: electrical engineering, nanotechnology, physics
Type of work: 80% modelings, 20% literature
Supervisor: Kristiaan Degreve
Daily advisor: Zubair Ahmed
The reference code for this position is 2022-003. Mention this reference code on your application form.