PhD researcher on study of impact of co-integration of IIIV semiconductor devices on Si platform for RF applications

Leuven - PhD
More than two weeks ago
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In recent years, a continuous drive to integrate heterogeneous technologies on a common platform has emerged in view of applications such as 5G communications, internet of things (IOT). One of the example of heterogeneous integration is integration of the RF technology with the digital logic technology. Traditionally, logic and RF integrated circuits have been implemented on separate platforms. Logic circuits have been implemented on Si substrates, whereas RF circuit are implemented on IIIV substrates. Logic circuits are benefitted from high volume and relatively low cost production which is enabled by a large sized Si substrates. Whereas RF circuits are benefitted from the high mobility offered by IIIV substrates. However, such RF circuits suffer from low volume of production due to expensive and smaller size of substrates. A heterogeneous integration scheme would offer us best of the both worlds, low cost and high performance.
Integration of IIIV semiconductors on Si, however, is a challenging task. Several challenges need to be tackled before such an integration can be feasible. In this PhD work you will be working on multiple aspects of heterogeneous integration such as device fabrication, characterization and analysis. You will be working with a team of experts in providing innovative solutions for integration RF devices such as p-n junction diodes, metal oxide semiconductor field effect transistors (MOSFETs), high electron mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs), RF passive components. Your daily activities will involve fabrication of one or more type of devices and test structures in IMEC’s clean room lab environment. You will use IMEC’s state of the art physical and electrical characterization setups to develop understanding on behaviour of IIIV devices upon integration on Si platform.
During this PhD you get an opportunity to develop several skills involved in fabrication of IIIV RF devices, integration, physical and electrical characterization. You will get a chance to learn from and work with experienced researchers at IMEC.
Our expectations: semiconductor device physics background, willingness to pick up diverse skills, hardworking, curious in nature, and experience of working in cleanroom is necessary, experience in physical (e.g. SEM inspections) and electrical characterization is a plus.

Required background: nanotechnology, electronics engineering, materials science, IIIV materials, semiconductor device physics

Type of work: 80% experimental and characterization work, 10% literature study, 10% modeling

Supervisor: Marc Heyns

Daily advisors: Amey Walke and Bernardette Kunert

The reference code for this PhD position is STS1712-01. Mention this reference code on your application form.

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