/Bias instability in GaN MISHEMT/MOSHEMT

Bias instability in GaN MISHEMT/MOSHEMT

Master projects/internships - Leuven | More than two weeks ago

Come join us to look into reliability aspects of GaN technology geared towards RF applications! 

Gallium nitride high electron mobility transistors (GaN HEMTs) offer a compelling combination of high-frequency operation, power handling capability, and efficiency making them a preferred choice for a wide range of RF applications, in particular power amplifiers,  where performance, size, and power efficiency are critical factors. In spite of these key advantages, GaN HEMTs are notorious to suffer from dispersion effects, which impede their RF performance and their reliability. It is therefore critical to study the physics of bias and temperature instabilities.
In this internship project, you will study the bias instability of GaN MISHEMT/MOSHEMT, its effects and correlations to large-signal/small-signal RF characteristics and culminating in a clear set of recommendations towards instability reductions.  The study may encompass many aspects of reliability including BTI, semi-ON-state stress and current collapse.  
You will work in close collaboration with experts from leading industry and from imec RF and reliability teams.


Type of Project: Internship 

Master's degree: Master of Engineering Science; Master of Science 

Duration: 3 - 4 months 

Master program: Nanoscience & Nanotechnology 

Supervisor: Bertrand Parvais (VUB) 

Supervising scientist(s): For more information or application, please contact Bertrand Parvais (bertrand.parvais@imec.be) and Uthayasankaran Peralagu (uthayasankaran.peralagu@imec.be) 

Only for self-supporting students.  

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