Spin torque-driven magnetic memories (ST-MRAM) are considered to be one of the most promising non-volatile memory technologies that can serve as an alternative to conventional CMOS-based memory technologies (SRAM, DRAM,..). The most common sub-flavour of this group of magnetic memories is known as STT-MRAM (Spin transfer torque-MRAM), and is targeted for a wide range of embedded applications, such as Last Level Cache (LLC). However, to ensure full commercialization of this tech, solving some of the last frontier challenges remain such as backhopping, process-induced damage modelling, lowering switching energy, etc. In this internship+thesis, the student will work with the supervising scientist in identifying the root causes for the existing bottlenecks by design experiments and/or MRAM material stacks for detailed electrical and magnetic characterization. The end result will be to propose material innovations that overcome said bottlenecks and achieve targeted product technology specifications.
Type of project: Combination of internship and thesis
Supervising scientist: For more information on the project or for sending in your application contact Siddharth Rao (Siddharth.Rao@imec.be).