PhD - Leuven | More than two weeks ago
The objective of this PhD project is to obtain insight into the mechanisms during deposition of dielectrics (e.g. Al2O3, HfO2, ZrO2 ...) onto 2D semiconductor surfaces. The initial growth mechanism during ALD is governed by several processes, including adsorption of precursors, surface reactions, diffusion and aggregation . The interplay of these processes can become complex especially for deposition on 2D semiconductors, as the initial interactions between the 2D material surface and precursors are weak due to the inherent self-passivated nature of 2D material surface . We will study these chemical and physical processes in-situ by characterization techniques like X-ray photo-electron spectroscopy and Atomic Force Microscopy, in imec’s new Materials and Interface (M&I) lab. Additional information about the growth evolution comes from ex-situ characterization techniques including Rutherford Backscattering spectrometry and Raman spectroscopy. We will explore ALD process modifications and functionalization approaches and insights will be used to design new deposition approaches to create nm-thin dielectric layers on 2D semiconductors. Finally, the properties of the deposited dielectric layers, the resulting interface with the 2D semiconductor and its performance in electrical devices will be tested in collaboration with the beyond CMOS team at imec.
Required background: Chemistry, Physics, Material science, Nanotechnology
Type of work: 10% literature, 90% experimental work
Supervisor: Annelies Delabie
Daily advisor: Daire Cott, Dennis Lin
The reference code for this position is 2021-071. Mention this reference code on your application form.