Defectivity reduction for enablement of EUV lithography for HVM

More than two weeks ago

Help push scaling down and learn on the fundamental and practical challenges of nanoscale processing

In this project, we assess the impact of materials and processes for reduction of single exposure extreme ultra-violet lithography for line and space patterns of 32nm pitch and below. The goal is to differentiate the potential sources of defects in EUV patterning to identify effective strategies for defect reduction. 

Stochastic defects remain a big challenge for the implementation of single exposure EUV lithography for printing ultra-small patterns. The process developed at imec uses the latest generation EUV scanners to print structures close to 30nm. These patterns are then transferred into relevant layers for defectivity characterization. 

The main focus of this work is on metrology, the student will characterize the incoming stack materials using optical techniques and the dimensions of the patterns at each step of the process using scanning electron microscopy (SEM) in the advanced 300mm imec wafer fab. In addition, optical inspection and SEM review will be used to collect information of the types and number of defects obtained when applying various materials and processes. Depending on skills and interest, wafer processing may be included as part of the project.‚Äč

Type of project: Combination of internship and thesis

Duration: 12-18 months

Required degree: Master of Science, Master of Engineering Science, Master of Engineering Technology

Required background: Chemistry/Chemical Engineering, Materials Engineering, Nanoscience & Nanotechnology, Mechanical Engineering

Supervising scientist(s): For further information or for application, please contact: Paulina Rincon Delgadillo (

Imec allowance will be provided for students studying at a non-Belgian university.

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