/Design of an auto-calibrated nanopower MOS reference-voltage generator for ultra-low-power high-density neural recording

Design of an auto-calibrated nanopower MOS reference-voltage generator for ultra-low-power high-density neural recording

Research & development - Leuven | More than two weeks ago

Turning a tiny voltage reference to practical neural interface.

Reference voltage generator is indispensable to power management unit of an IC. The classic Bandgap Reference (BGR) is bulky and power-hungry. It is thus no longer fit well into any multi-channel, high-density, neural recording chip that is required to be extremely tiny and low-power. MOS voltage reference (MVR) is feasible as a replacement since it can be implemented from a few transistors conducting only pA-level leakage current. Unfortunately, the precision of MVR is lower than the classic BGR, the applicability of MR is thus limited.


This project aims to enable the MVR for practical use in the PMU of a neural recording chip with sufficient accuracy nd tiny area. The student will deal with literature research for the most suitable automatic calibration scheme to apply for precision enhancement of the MVR in a scaled CMOS technology. The student will also design the auto-calibrated MVR and complete the verification ready for a tapeout.  



Type of project: Internship

Duration: 9 months

Required degree: Master of Engineering Technology, Master of Science, Master of Engineering Science

Required background: Electrotechnics/Electrical Engineering

Supervising scientist(s): For further information or for application, please contact: Chutham Sawigun (Chutham.Sawigun@imec.be) and Xiaolin Yang (Xiaolin.Yang@imec.be)

Imec allowance will be provided for students studying at a non-Belgian university.