Design of a mm-wave GaN power amplifier for 5G wireless communication

Leuven
|
More than two weeks ago

You will design a mm-wave power amplifier that will beat CMOS with more than an order of magnitude: no milliWatts but Watts!

The 5th generation mobile network (5G) can provide wireless communication at data rates of several Gigabits per second (Gbps) with low latency and high reliability, enabling a lot of new applications. The 28GHz frequency band is being used for 5G due to a large available bandwidth leading to high data rate. The power amplifier (PA) in the 28GHz transceiver front-end is one of the key blocks and obtaining high gain, output power, efficiency, and linearity at the same time is a challenge. Gallium nitride (GaN) transistors have high breakdown voltage compared to silicon-based technologies and a GaN PA can achieve excellent output power and efficiency. In this project, a 28GHz power amplifier will be designed in a GaN process technology. This work involves deriving the required specifications of the PA from system analysis, designing the PA in schematic, drawing the corresponding layout, extracting layout parasitics, and finally obtaining the required specs from post-extraction simulation by working closely with the researchers in imec. Interested students can do this work either in imec Leuven or in imec Florida.​​​

Type of project: Combination of internship and thesis

Duration: 6 months

Required degree: Master of Engineering Science

Required background: Electrotechnics/Electrical Engineering

Supervising scientist(s): For further information or for application, please contact: Aritra Banerjee (Aritra.Banerjee@imec-int.com)

Imec allowance will be provided for students studying at a non-Belgian university.

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