The field of quantum computation has expanded rapidly over the last decade with demonstrations of high-fidelity quantum bits (qubits) on a variety of platforms. Electron spins in silicon are a strong candidate to implement qubits due to their long stability times, compactness and similar fabrication methods to those employed in the microelectronics industry. While remarkable progress have been made with silicon qubits, the development of silicon quantum computers is still in its infancy. A critical aspect that can accelerate the progress towards the realization of robust silicon quantum computers is device design.
In this Master’s internship, the candidate will focus on the TCAD design of qubit devices based on Silicon/Silicon-Germanium (Si/SiGe) heterostructures. The role of the candidate is to explore different geometries required for hosting Si/SiGe spin qubits, model the associated qubit parameters and identify optimal designs. The candidate is further expected to collaborate with qubit fabrication and characterization experts, and provide design feedback. Knowledge about semiconductor devices, TCAD modeling techniques, and understanding of quantum systems are a strong plus for the candidate.
Type of project: Internship
Duration: 3-6 months
Required degree: Master of Engineering Technology, Master of Science, Master of Engineering Science
Required background: Nanoscience & Nanotechnology, Physics, Electrotechnics/Electrical Engineering
Imec allowance will be provided.