Design & Simulation of Silicon Qubit Devices for Quantum Computation

About a week ago

Design the next generation silicon qubit devices that will be fabricated and characterized at imec.

The field of quantum computation has expanded rapidly over the last decade with demonstrations of high-fidelity quantum bits (qubits) on a variety of platforms. Electron spins in silicon are a strong candidate to implement qubits due to their long stability times, compactness and similar fabrication methods to those employed in the microelectronics industry. While remarkable progress have been made with silicon qubits, the development of silicon quantum computers is still in its infancy. A critical aspect that can accelerate the progress towards the realization of robust silicon quantum computers is device design. ​​

In this Master’s internship, the candidate will focus on the TCAD design of qubit devices based on Silicon/Silicon-Germanium (Si/SiGe) heterostructures. The role of the candidate is to explore different geometries required for hosting Si/SiGe spin qubits, model the associated qubit parameters and identify optimal designs. The candidate is further expected to collaborate with qubit fabrication and characterization experts, and provide design feedback. Knowledge about semicond​uctor devices, TCAD modeling techniques, and understanding of quantum systems are a strong plus for the candidate.

Type of project: Internship

Duration: 3-6 months

Required degree: Master of Engineering Technology, Master of Science, Master of Engineering Science

Required background: Nanoscience & Nanotechnology, Physics, Electrotechnics/Electrical Engineering

Supervising scientist(s): For further information or for application, please contact: Fahd Ayyalil Mohiyaddin ( and Bogdan Govoreanu (

Imec allowance will be provided.

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