Development of next-generation spintronics-based magnetic RAMs (MRAM)

Leuven - Master projects/internships
More than two weeks ago

STT-MRAM - Get involved in the development and testing of new material and device design concepts for ultra-fast memory applications.

This 6 month internship will focus on the in-depth electrical characterization of STT-MRAM devices for next-generation memory applications such as last level cache (LLC) memories. The candidate will have an opportunity to be involved in the development of best-in-class MRAM devices by carrying out a thorough performance evaluation of the magnetic and electrical performance by pre-defined procedures established at IMEC. In addition to being a rare, hands-on learning experience, the candidate will also have the opportunity to carry out this work on devices grown on IMEC's state-of-the-art 300mm assembly line process, in line with the semiconductor industry standard. Inferences/learnings gained by this process of evaluation will be used to feedback to the next cycle of device development, thereby completing the research learning cycle and bringing value to the memory program at IMEC. 

Type of project: Internship

Duration: 6 months

Required degree: Master of Engineering Technology, Master of Science

Required background: Electrotechnics/Electrical Engineering, Nanoscience & Nanotechnology

Supervising scientist(s): For further information or for application, please contact: Siddharth Rao (

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