Electrical characterization of 2D-channel devices

2D materials have been proposed for more than one decade to replace the Silicon channel in future CMOS technologies, and extend Moore’s law validity, thanks to their large electron and hole mobilities, achievable at an atomic-scale thin channel, which also provides superior electrostatic control. Their adoption by a mainstream technology, or emergence as an alternative technology to CMOS, remains however an enormously challenging task, where technological advance situates at the confluence of fundamental material understanding, innovative device engineering and process control, pragmatic tackling of reliability concerns and design requirements.

In view of understanding material and device behavior, and in order to improve the fabrication process, a key task is to extensively characterize electrically devices fabricated in our cleanroom facilities. The electrical data will be used to benchmark device performance, extract electrical parameters and correlate with processing history, process and material parameters, in order to gain insight into device physics and operation and subsequently optimize the fabrication process and/or device design. 

We are looking for an enthusiastic student in the field of physics or electrical engineering, with a solid theoretical knowledge and affinity for experimental work, who could perform electrical characterization using specific instrumentation in the electrical characterization lab, and and large amount of data using scientific and/or statistical software. You will be helped by our top team of device and process engineers, and work in close collaboration with scientific staff. Familiarity with CMOS technology is a plus. Good knowledge and command of the English language is a must. You feel comfortable to work in a multicultural environment, you are flexible and dependable.

(duration 6-9 months, thesis possible)