Spin-transfer torque magnetic resistive memory (STT-MRAM), is emerging as a potential replacement for Flash and/or DRAM applications, as they exhibit non-volatility, high-speed, low-voltage switching and almost unlimited read/write endurance. However, significant challenges toward the widespread commercialization of this technology are still in the area of process scaling, materials integration and physical operative mechanisms. In this context, electrical scanning probe microscopy (SPM) techniques such as (C-AFM, KPFM and SSRM) represent invaluable tools for the analysis of post-patterning treatment and material selection in magnetic tunnel junctions, as they allow the probing of nanoscaled features. This internship/thesis fits into the characterization framework for STT-MRAM using a set of electrical SPM techniques. You will be trained in the use of the tool and you will intensively use it focusing on device characterization methodologies. During the period of the internship the student will focus particularly on material characterization and AFM-analysis. The data analysis and interpretation will cover an important part of the work; you will apply statistical principles in data collection and will be asked to rule out your results. You will work in an international R&D team; a good command of English language is required.
Type of project: Internship, Thesis
Duration: 6 months
Required degree: Master of Science
Required background: Electrotechnics/Electrical Engineering, Materials Engineering, Mechanical Engineering, Nanoscience & Nanotechnology
Imec allowance will be provided.