Exploration of novel design considerations in domain wall MRAM devices

The extreme requirements of scaling and performance in current semiconductor technologies for memory have led into a more complex research landscape, where instead of straight miniaturization we must start looking into completely novel devices that can either replace existing solutions (such as SRAM or DRAM) or enable completely new forms of memory and computing-in-memory such as neuromorphic devices. 

Domain wall (DW) MRAM (magnetoresistive-RAM or more generally magnetic-RAM) devices, that encapsulate information within the magnetic domains of a material (regions of local, strong alignment of spins), are one such novel solution. DWs have, potentially, a high degree of maneuverability, being able to be transported (thus representing information transport) at high speeds and low energy costs. Memories based on DW storage can prevent leakage, have high endurance and allow for novel ways of storing and computing on bits within the memory device itself. 

For all its potential, DW memory remains at a premature state due to different reasons. One of the most significant challenges involved is that of designing devices with reliable DW conduits and robust pinning mechanisms, that is, ways of making sure magnetic domains can be transported in discrete stages while also be contained within predictable locations inside a device structure. The underlying physics of DW pinning requires exploration of both material parameters and geometric conditions of devices, and any proposed solution for reliable operation must also be scalable to enable realistic DW memory applications.  

In this Master’s thesis and internship, your job will be to explore these design aspects through a combination of micromagnetic simulations and experimental characterization techniques. Both simulation and experimental developments are equally important in this challenge, and you will be able to make a true impact in pushing our current state-of-the-art towards device concepts that can be realized in applications, as well as giving a significant contribution to our fundamental understanding of magnetic domain transport in different types of device geometry. 

Type of project: Combination of internship and thesis 

Type of degree: Master’s in Science 

Duration: 6 – 9 months 

Required background: Nanoscience & Nanotechnology, Physics, Electrotechnics/Electrical Engineering 

Previous knowledge of micromagnetic simulations is a strong bonus.