The deployment of mmWave 5G radio systems pushes the requirements on device performance further than ever: achieving very high-power efficiency at mmWave frequencies becomes critical. Therefore, new III-V and III-N technologies are currently being developed at imec. The strong value is that these emerging technologies are compatible with large scale Si manufacturing, which is an important benefit to reduce fabrication costs.
In this context, it is key to evaluate the new devices in terms of both their small and large signal behaviour at mmWave frequencies. In terms of the latter, the first 3 harmonics of a 28 GHz signal, which corresponds to the first band allocated to mmWave 5G systems, must be measured to obtain insights in the device's large-signal behaviour and performance, but the state-of-art equipment available today for large-signal characterization is limited to 67 GHz, which drives the need for innovation.
In this PhD, you will develop advanced characterization techniques for nonlinear mmWave III-V and III-N devices. You will use state-of-the-art equipment (vector network analyzers, large-signal network analyzers, load-pull, fast oscilloscope,...) and develop new benches, as well as related calibration and de-embedding methods for accurate on-chip characterization at mmWave frequencies. The measurement results will deliver data that will feed into imec's technology optimization and device modelling.
Required background: Candidates are expected to have a Master’s degree in Engineering Science with a strong interest in RF/microwave techniques as well as semiconductor physics.
Type of work: 10% literature, 50% experimental, 40% modeling
Supervisor: Dominique Schreurs
Daily advisor: Bertrand Parvais
The reference code for this position is 2020-046. Mention this reference code on your application form.