CMOS and beyond CMOS
Discover why imec is the premier R&D center for advanced logic & memory devices. anced logic & memory devices.
Connected health solutions
Explore the technologies that will power tomorrow’s wearable, implantable, ingestible and non-contact devices.
Life sciences
See how imec brings the power of chip technology to the world of healthcare.
Sensor solutions for IoT
Dive into innovative solutions for sensor networks, high speed networks and sensor technologies.
Artificial intelligence
Explore the possibilities and technologies of AI.
More expertises
Discover all our expertises.
Be the first to reap the benefits of imec’s research by joining one of our programs or starting an exclusive bilateral collaboration.
Build on our expertise for the design, prototyping and low-volume manufacturing of your innovative nanotech components and products.
Use one of imec’s mature technologies for groundbreaking applications across a multitude of industries such as healthcare, agriculture and Industry 4.0.
Venturing and startups
Kick-start your business. Launch or expand your tech company by drawing on the funds and knowhow of imec’s ecosystem of tailored venturing support.
/Job opportunities/Ferroelectrics devices for next generation memories: modelling for circuit simulations

Ferroelectrics devices for next generation memories: modelling for circuit simulations

Research & development - Leuven | More than two weeks ago

Get experience in advanced memory devices from mathematical modelling to circuit design
The discovery of a ferroelectric phase in doped hafnia materials opened new pathways for energy efficient and nanosecond fast memory devices. Ferroelectric capacitors are considered for DRAM replacement, while 1T-FeFET cell configuration allows fabrication of high storage density non-volatile memories. Today, the physical principles of ferro-based operation still remain partly elusive, hindering the progress in device modeling. Understanding them is critical not only from the technology perspective, but also in order to design properly the memory cells and periphery.
In this internship, you will be involved in model development and calibration of these models on experimental data, then test these models on low level circuit design. For this reason some background in device physics, SPICE simulations (circuit simulations) and coding is essential.  You will interact daily with material scientists, modeling experts, integration, and characterization engineers.

Type of project: Internship

Duration: 3 months

Required degree: Master of Engineering Technology, Master of Engineering Science

Required background: Electromechanical engineering, Electrotechnics/Electrical Engineering, Physics, Computer Science, Nanoscience & Nanotechnology

Supervising scientist(s): For further information or for application, please contact: Marie Garcia Bardon ( and Kuba Kaczmarek (

Imec allowance will be provided for students studying at a non-Belgian university.