Ferroelectrics devices for next generation memories: modelling for circuit simulations

The discovery of a ferroelectric phase in doped hafnia materials opened new pathways for energy efficient and nanosecond fast memory devices. Ferroelectric capacitors are considered for DRAM replacement, while 1T-FeFET cell configuration allows fabrication of high storage density non-volatile memories. Today, the physical principles of ferro-based operation still remain partly elusive, hindering the progress in device modeling. Understanding them is critical not only from the technology perspective, but also in order to design properly the memory cells and periphery.

 

In this internship, you will be involved in model development and calibration of these models on experimental data, then test these models on low level circuit design. For this reason some background in device physics, SPICE simulations (circuit simulations) and coding is essential.  You will interact daily with material scientists, modeling experts, integration, and characterization engineers.