Ge(Si) multi quantum well based optoelectronic devices

More than two weeks ago

Device modelling and characterisation

Silicon photonics based photonics integrated circuits (PICs) have been widely used for short-reach optical interconnect applications needed for Data-centers. Within imec’s silicon photonics platforms, Germanium is a widely used material to realize high speed photodetectors, avalanche photodetectors and Franz-Keldysh effect (FKE) based electro-absorption modulator (EAM) that support data-rates of 50 Gbps and beyond with NRZ-OOK modulation formats. While the FKE EAM operates only at C and L band of fiber-optic communication, quantum-confined Stark effect (QCSE) based electro absorption modulator can operate at O band of communication, making them a strong candidate for data-center PICs. In addition to this, QCSE EAMs are highly energy-efficient as they exploit the excitonic resonance peaks in QCSE based absorption effect, that are present in Ge based multi-quanum well (MQW) material system. These results, have been demonstrated in imec and have garned attention in the optical communication community. While in current demonstration, the QCSE behaviour in Ge/Si based MQW material system have been exploited as an electro-absorption modulator, they also have huge potential to operate as a phase modulator. QCSE based phase modulators have been widely used in III-V based material platforms. But the research on Ge/Si based MQW material system have not been extensively been explored. This motivates the need for the student/intern to be involved in bridging the gap in the scientific community. To support this activity in imec, the student/intern will first calibrate an in-house developed model led by the modeling team, to calibrate the electro-absorption behaviour with device results. She/he will then use this model to predict the phase-modulation behaviour of Ge/Si MQW devices using Kramer-Kroning relations and will support this prediction with experimental characterization of the devices using an Optical Backscatter Reflectometer system from Luna. She/He will then extend the study to a functional device concept using Lumerical. To enable the work, the student/intern will be guided by a team of optical and semiconductor device physicists and photonics engineers from 3D and Silicon photonics team at imec. We encourage students who have exposure on photonics/optoelectronic devices and/or have keen interest in semiconductor physics to apply for this position. As the work relies on modeling and data-analysis of the experiments performed by the student, prior experience on python or matlab is essential.

Type of project: Internship, Combination of internship and thesis

Duration: 3 to 4 months

Required degree: Master of Engineering Technology, Master of Science, Master of Engineering Science

Required background: Physics, Nanoscience & Nanotechnology

Supervising scientist(s): For further information or for application, please contact: Ashwyn Srinivasan ( and Mathias Berciano ( and Marianna Pantouvaki (

Imec allowance will be provided.

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