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/Job opportunities/A heterostructure spintronic device based on Topological Insulators and low-dimensional magnets

A heterostructure spintronic device based on Topological Insulators and low-dimensional magnets

PhD - Leuven | More than two weeks ago

Model and simulate novel topological spintronic heterostructure device based on spin current injection into low-dimensional magnets.

Moore's law has all but halted because scaling of transistors has led to reduced carrier mobility and diminished gate control with thinning of 3D materials, e.g. in extremely scaled Si transistors. Spintronic devices, devices which use the spin of an electron for computation, open a plethora of opportunities for highly scaled, energy-efficient devices. Present-day spin-based devices use hard ferromagnetic materials and can operate with low power consumption, but they are slow and cannot be scaled down. Low-dimensional (layered/two-dimensional) magnetic materials combined with topological insulators (TIs) open a great avenue for designing fast, low-power and energy efficient spintronic devices. TI edge/surface states can generate highly spin-polarized currents that enable the efficient switching of soft-layered magnets. Due to the anisotropic softness of the layered magnetic materials, spin-domain change is fast and more efficient compared to present-day devices. In the framework of this PhD thesis, we will theoretically investigate spin-current injection from TIs to the low-dimensional magnets for an ultimate spintronic device. The TI will be used as a spin-current source to switch the spin-domain of the low-dimensional magnetic material. To simulate this, we will use our in-house Monte-Carlo code coupled with an in-house transport code.  The main outcome of this proposed research will be to interface a TI with low-dimensional magnetic materials and design a high-performance spin-based device.

 

The research will be conducted jointly between imec/KU Leuven, Belgium and the department of materials Science at UT Dallas. Both are world-renowned institutions in the field of nanoelectronics research. Upon completion of the PhD program, the student will be awarded a PhD degree from KU Leuven and UT Dallas. In the first stages of the PhD, research will mainly take place at UT Dallas where the student will take up coursework (tuition will be paid by UT Dallas).



Required background: Physics, Electrical engineering, Engineering physics

Type of work: 80% modeling 20% literature

Supervisor: Kristiaan Temst

Co-supervisor: Bart Soree

Daily advisor: Bart Soree

The reference code for this position is 2021-055. Mention this reference code on your application form.

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