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/Job opportunities/High-temperature perovskites on Silicon for X-ray energy analysis

High-temperature perovskites on Silicon for X-ray energy analysis

PhD - Leuven | About a week ago

Build a new detector for X-ray analysis on silicon based on the efficient absorption of X-rays in perovskites

Introduction

Current EDS (Energy Dispersive Spectroscopy) detectors for X-rays are based on the collection of the generated carriers over a large silicon detector volume. The large detector volume is required due to the long absorption length for X-rays in silicon. The accuracy of the obtained energy spectrum is defined by the drift and diffusion of the carrier profile towards the collecting junction and can be affected by the large volume of the detector.  In the past years, imec has developed a high-temperature perovskite technology that can be deposited on top of silicon. The much higher absorption of X-rays in perovskites, due to a higher density and larger stopping power of the material, enables a much more compact and much more efficient detector implemented on top of silicon, while a larger band gap can provide a lower limit of detection when compared with silicon detectors. Moreover, imec also has access to the design technology that enables accurate read-out of the carrier profile.

Topic

The purpose of this PhD is to design, test and measure a new EDS type of detector collecting the X-ray energy spectrum. This will be done by the evaporation of perovskites detector layers on top of the silicon read-out circuit. Together with the KULeuven, you will design a radiation hard readout circuit that accurately measures the “time-of-diffusion” of the carriers in the Perovskite and derive from these measurements the X-ray-energy spectrum with high accuracy. This PhD topic will be in close collaboration with the ESAT/ADVISE team (the team of the co-promotor Prof. Paul Leroux), which has built up a broad experience on radiation hard circuit design for silicon read-out and on the characterization of radiation hard devices. Depending on the specific availability of irradiation facilities, part of the detector characterization in radiation environment can also be done at CERN, SCK-CEN, Mirion Technologies, Centre Spatial de Liege or other partner institutes.

The candidate

You are a highly motivated recent graduate holding a master’s degree in nano-engineering, physics, material science, electrical engineering, or related. You have an interest in the processing of thin-film semiconductors, optical effects in such layers, and electrical and optical characterization. You will be expected to work safely in a cleanroom environment and acquire processing and lab skills. It is expected that you will present results regularly.  You are a team player and have good communication skills as you will work in a multidisciplinary and multicultural team spanning several imec departments. Given the international character of imec, an excellent knowledge of English is a must.



Required background: electronics, design; a good background in physics

Type of work: 15% literature study, 25% modeling, 20% electronic design, 20% device fabrication, 20% test and measurements of circuits in an X-ray environment

Supervisor: Jan Genoe

Daily advisor: Robert Gehlhaar, David Cheyns

The reference code for this position is 2021-103. Mention this reference code on your application form.

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