/Highly-sensitive optical receivers with low power consumption

Highly-sensitive optical receivers with low power consumption

PhD - Leuven | More than two weeks ago

We offer you the opportunity to join the world’s leading research center in nanotechnology and become part of a future team that shapes the future.
Silicon Photonics (SiPho) is a fast-growing technology addressing many applications such as data communication, sensing, imaging, and metrology to name a few. By leveraging the mature Complementary Metal Oxide Semiconductor (CMOS) processes used in electronics, high-volume and high-yield Photonic Integrated Circuits (PICs) can be fabricated at a relatively low cost. Among the major building blocks in a PIC, the photodetector is critical in interfacing with electronics used for data processing. However, standard photodetectors based on p-i-n diodes are limited in sensitivity due to their inherent maximum quantum efficiency. To overcome this limitation, avalanche photodetectors (APDs) can be considered due to the photocurrent multiplication gain induced by the avalanche effect under high applied electric fields.


Imec has been working on the development of Ge-on-Si (A)PDs and monolithic III – V photodetectors. The aim of the development is to target highly sensitive optical receivers for the application of telecommunication, and data centers. In this context, the objective of the PhD is to research monolithic III – V optical receivers with optical amplification to achieve low power consumption combined with high sensitivity PDs in the 200 mm and 300 mm platforms at imec.

Required background: Photonics, Applied Physics, Electrical Engineering, and Optical Engineering

Type of work: Literature study (10%), design modelling (20%), simulation (30%), layout (10%), characterization (30%)

Supervisor: Dries Van Thourhout

Daily advisor: Mathias Berciano

The reference code for this position is 2023-004. Mention this reference code on your application form.

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