/Investigating magnetic immunity in STT-MRAM

Investigating magnetic immunity in STT-MRAM

Master projects/internships - Leuven | More than two weeks ago

High magnetic fields: A threat to STT-MRAM's reliability?

​Spin-transfer torque magnetic random access memory (STT-MRAM) is an emerging non-volatile memory technology that promises high density, low power consumption, and fast access times. However, data loss due to accidental or deliberate exposure to high magnetic fields can reduce the reliability and lifetime of the memory. Magnetic immunity, which refers to the ability of a memory device to maintain its magnetic state in the presence of external magnetic fields, is therefore a critical aspect of STT-MRAM design and operation.

In this master thesis, the student will investigate magnetic immunity in STT-MRAM, understand the physical parameters determining the behavior under various magnetic field disturbances and propose design strategies to enhance the magnetic immunity.

The thesis work will involve following tasks:

  1. Literature review: Conduct a thorough review of the existing literature on magnetic immunity in STT-MRAM, including the sources of magnetic disturbances and the existing solutions to enhance magnetic immunity.
  2. Design experiments on existing state-of-the-art STT-MRAM arrays to study impact of external magnetic fields on switching.
  3. Modeling and simulation: Use micromagnetic simulation tools such as OOMMF/Mumax to model and simulate the behavior of STT-MRAM cells under various magnetic field disturbances.
  4. Design optimization: Based on the simulation and experimental results, propose and optimize design strategies to enhance the magnetic immunity of STT-MRAM cells, such as changing the cell shape or materials, adjusting the cell dimensions, and adding shielding layers.

This project allows the student to not only learn the physics behind STT-MRAM, but also to evaluate with experiments/modeling what happens under external magnetic fields. The student will be closely guided by a team of MRAM experts. The outcome of this project can lead to further development and optimization of the STT-MRAM technology.

Type of Project: Thesis, Combination of internship and thesis 

Master's degree: Master of Engineering Science; Master of Engineering Technology; Master of Science 

Duration: 1 year 

Master program: Nanoscience & Nanotechnology; Electrotechnics/Electrical Engineering; Physics 

Supervisor: Ingrid Verbauwhede 

For more information or application: please contact Simon Van Beek (simon.vanbeek@imec.be)


Only for self-supporting students. 

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