PhD - Leuven | More than two weeks ago
The PhD candidate will concentrate on the fundamental understanding of the different mechanisms governing carrier transport through various metal / semiconductor (MS) interfaces targeting logic applications. He / she will experimentally validate the theoretical aspects by fabricating state-of-the-art contacts and assessing their electrical properties. A specific focus will be dedicated to the analysis of the composition profiles and material structural properties throughout the stacks. The experimental work will include a combination of advanced source/drain epitaxial growth and activation processes, the deposition of novel contact metals, (eventual) post contact formation treatments and a correlation of the (germano-)silicide phases formed at the MS interface with the achieved contact properties. The learnings from initial blanket experiments will finally be transferred to advanced device test structures. Moreover, density functional theory (DFT) and technology computer-aided design (TCAD) simulations will support the study. The activity will benefit from imec’s unique expertise in the low temperature chemical vapor deposition of highly doped n-Si and p-SiGe semiconductors using conventional and exploratory precursors. Advantage will be taken from a variety of metal deposition systems and characterization techniques available at imec premises. A constant literature survey will ensure a detailed follow-up of the latest achievements and trends in the field.
Required background: Master in material science / physics / engineering
Type of work: 50% experimental work / data analysis, 20% theoretical study, 15 % literature study, 15% dissemination
Supervisor: Clement Merckling
Daily advisor: Clement Porret, Roger Loo
The reference code for this position is 2022-002. Mention this reference code on your application form.