/Master Student - Fabrication and Electrical Characterization of thin-film transistors based on oxide-semiconductors

Master Student - Fabrication and Electrical Characterization of thin-film transistors based on oxide-semiconductors

Master projects/internships - Leuven | More than two weeks ago

Thin Film transistors; IGZO; oxide semiconductors; fabrication; electrical characterization 

What the context of this work is

Amorphous metal oxide semiconductors (OS) like Indium-Gallium-Zinc-Oxide (IGZO) are commonly used in liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays manufacturing thanks to their field-effect mobility (>10 cm2/V·s), good uniformity over large glass substrates sizes, low-temperature process and relatively good bias-thermal stress stability. Besides driving innovative thin-film transistors for display applications, the BEOL-compatibility of oxide semiconductors is a key property to improve system scaling in the semiconductor industry, enabling new solutions for 3D-integration and array stacking. These properties, combined with extremely low leakage currents (down to <10-20 A/um), open a completely new landscape for novel memory devices, where the scalability and the data retention are dramatically boosted. 
However, to target DRAM applications and achieve high write and read speed, the on-current of the FET devices based on oxide semiconductors is to be improved. For this reason, oxide semiconductors different than IGZO are being explored, aiming at higher carrier mobility.  

What you will do

In this role, you will fabricate and electrically characterize thin-film transistors with different OS as channel materials. You will be performing several fabrication processes (e.g., deposition, lithography, etch) and electrical tests (e.g., capacitance-voltage and current-voltage measurements). Through this deep electrical characterization, you will aim at understanding the impact of the oxide semiconductor properties on the device parameters, such as threshold voltage, mobility, contact resistance and subthreshold slope. Thanks to your study, you will down select the materials enabling to improve the performance of OS-TFT based memory architectures. The ideal candidate has a strong knowledge of transistor device physics and experience in semiconductor device fabrication and electrical testing. 

What we do for you

We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow. 
Our open, multicultural, and informal working environment makes imec a unique platform providing ample possibilities to gain experience in the semiconductor domain. We commit to supporting and guiding you in this process. 
Your energy and commitment are appreciated by means of fair compensation. 

Who you are
  • You are pursuing a Master degree in Electrical & Electronics Engineering, Semiconductor device Physics, Material Science or related fields.
  • You have a solid background of electrical engineering. Good knowledge of device physics, technology and lab/fab process is recommended.
  • You are a communicative team player, yet you are able to work independently.
  • You like taking initiative while keeping a constructive attitude.
  • Given the international character of imec, a fluent knowledge of English is necessary. 

Type of Project: Combination of internship and thesis 

Master's degree: Master of Engineering Technology; Master of Engineering Science; Master of Science 

Duration: 6-9-12 months 

Supervisor: Jan Van Houdt 

For more information or application, please contact Anastasiia Kruv (anastasiia.kruv@imec.be).


Imec allowance will be provided for students studying at a non-Belgian university. 

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