PhD - Leuven | More than two weeks ago
Magnetic material-based memories are an emerging class of devices promising non-volatility, high-speed and low power. The first generation of memory devices, known as Spin Transfer Torque (STT) magnetic random-access memory (MRAM), are about to hit large scale production for embedded memory replacement. With a view towards second generation and later MRAM, our team is working on alternative switching mechanisms of which Spin-Orbit-Torque (SOT) and Voltage Control of Magnetic Anisotropy (VCMA) are the most promising. Currently, these mechanisms have higher than expected write energy, large Write Error Rates (WER) and require an external field. In addition, slow STT-MRAM write speeds are limiting its application beyond the eFlash space. Antiferromagnetic and ferrimagnetic spintronics have demonstrated faster write speeds and could enable field free switching, benefits to scaling and lower write energies. However, the state of the art is limited to the CoFeB/MgO system, reducing the flexibility to integrate these material systems. Thus, the future of MRAM will be linked with the development of magnetic stacks capable of incorporating such materials.
Required background: Physics, Materials Science, Electrical Engineering or equivalent
Type of work: Literature study (10%), experimental work (80%), modelling (10%)
Supervisor: Kristiaan Temst
Co-supervisor: Claudia Fleischmann
Daily advisor: Diogo Costa, Robert Carpenter
The reference code for this position is 2021-020. Mention this reference code on your application form.