Research & development - Leuven | More than two weeks ago
The fifth generation of cellular communication (5G) promises a tenfold increase in data rates. The millimeter-wave (mmWave) spectrum bands represent an opportunity for these extremely broadband mobile communication because of the large available bandwidth at these frequencies. The high manufacturing volumes expected for 5G user equipment devices favor low-cost and high-integrated technologies, which are typically today Si based. Unfortunately, these technologies are un-efficient in mmWave power generation. The current research in the field aims therefore to develop devices which can be manufactured at large scale while capable of generating efficiently mmWave power.
In this Ms thesis, you will characterize and model the advanced transistors developed in imec for 5G mmWave applications. These transistors, while fabricated on a Si platform, are using III-V or GaN materials to enhance the power generation efficiency. You will measure small and/or large signal RF characteristics over a broad frequency range (kHz up to 110GHz). From these measurements, you will complete the transistor models which will serve both to optimize the technologies and to simulate mmWave circuits. You will be part of a research team in imec specialized in the modelling of advanced transistors.
Type of project: Combination of internship and thesis
Duration: 6 months
Required degree: Master of Engineering Technology, Master of Engineering Science
Required background: Electromechanical engineering, Physics, Nanoscience & Nanotechnology, Electrotechnics/Electrical Engineering
Supervising scientist(s): For further information or for application, please contact: Bertrand Parvais (Bertrand.Parvais@imec.be)
Imec allowance will be provided for students studying at a non-Belgian university.