Numerical Simulation of MOS Devices for Quantum Computing Applications

A promising approach to overcome this problem is to deploy traditional CMOS circuitry in cryogenic environments  for efficient operation of future quantum computers by reducing limitations due to wiring and signal integrity.

Common models used in technology computer aided design (TCAD) often fail to capture important physical mechanisms relevant for cryogenic temperatures such as band-tail states at the silicon-oxide interface, carrier-phonon interactions, or the effects of mechanical strain. As the noise and devices performance of the CMOS circuitry directly affect the fidelity of the qubit control, understanding their limitations is an important goal. You will therefore focus on simulating and understanding the behaviour of CMOS circuitry and the underlying silicon and gate stack at (deeply) cryogenic temperatures.

What you will do:

• You will play a key role in setting up and calibrating cryogenic simulations of advanced CMOS devices in state-of-the-art TCAD tools
• You will help to find pathways to optimize device designs towards operation at deep cryogenic temperatures
• Your studies will help to explore the limits of traditional TCAD models and improve our understanding of the physics of MOS devices at cryogenic temperatures.

Who you are:

• You have a Master’s degree in material science, microelectronics, computational physics, electrical engineering or related fields
• You would like to understand semiconductor physics at cryogenic temperatures on a fundamental level
• You like taking initiative; you are persuasive and assured, while keeping a constructive attitude within the team.
• You show the flexibility to adjust your scientific focus to the priorities in a rapidly evolving field of study
• Given the international character of imec, a fluent knowledge of English is necessary.