Leuven | More than two weeks ago
Infrared photodetectors are ubiquitous in ranging applications, where the distance from the sensor to the target is assessed by either the time delay or the phase shift of the reflected beam compared to the emitted light. Short-wave infrared (SWIR, l=1.4mm...3mm) is a very appealing wavelength range to extend the range and the accuracy of such ranging depth sensors, as this wavelength range has very little atmospheric background light and because the human eye is less sensitive in SWIR than in NIR (near infrared). As the reflected light on the sensor is weak, sensitive detectors with very low dark currents are required. The challenge, however, is that semiconductors sensitive to SWIR, such as Germanium (Ge), have smaller bandgaps than Silicon which result in larger dark currents.
At imec, we are developing Germanium photodiodes in 200 mm or 300 mm process flows with low leakage current, together with optical waveguides into photonic IC’s.
The goal of this position is to characterize material & device characteristics of Ge based photodetectors to better understand the band structure and identify passivation strategies that would enable better Ge photodetectors. The photodetectors will be tested under various configurations.
Type of work:
60% experimental work, 30% data analysis/modelling, 10% literature review
Type of project: Combination of internship and thesis
Duration: 6 months
Required degree: Master of Engineering Technology, Master of Science
Supervising scientist(s): For further information or for application, please contact: Vittal Thanjavur Prakasam (email@example.com) and Sandeep Seema Saseendran (Sandeep.SeemaSaseendran@imec.be) and Gauri Karve (Gauri.Karve@imec.be)
Imec allowance will be provided.