Internship/thesis - Leuven | More than two weeks ago
Making use of 1/f noise and microscopic fluctuations to better understand the fundamental degradation physics of dielectrics used in state-of-the-art nano-electronic chips
Dielectric breakdown is one of the most important failure mechanisms responsible for the performance degradation of a wide spectrum of semiconductor devices. Dielectric failures are one of the main obstacles for the continuation of Moore’s law. Conventional methodologies study dielectric failures using accelerated tests, such as e.g. Time-Dependent Dielectric Breakdown (TDDB). The main limitation of TDDB is the lack of physical insights into the dielectric degradation mechanisms.
In this project, an alternative methodology, based on 1/f noise, is explored to complement the missing physics of TDDB. 1/f noise probes the average defect density of the material. The more defects or ‘traps’ a dielectric has, the more degraded it is. The 1/f noise spectrum is obtained by examining the microscopic fluctuations arising in the dielectric leakage current. By studying the statistical distribution of these fluctuations, one can obtain a fundamental understanding of the physics of dielectric breakdown.
Type of work: 50 % experimental, 30 % data analysis, 20 % interpretation
Duration: Minimum 3 months
Language requirements: English
Type of Project: Internship
Bachelor's program/required background: Physics, Electrical Engineering, Nanotechnology, Materials Science, Materials Engineering