Research & development - Leuven | More than two weeks ago
Front-end modules (FEMs) with CMOS-compatible III-V technologies have been proposed as the essential components in the 5G and beyond 5G mobile applications, operating at mm-wave frequencies, and will be compact, powerful, cost and energy efficient.
Key Solutions of the related co-integration between CMOS and III-V technologies have been also developed and demonstrated by imec and few others. However, relevant reliability investigations in these III-V FEMs are still very limited, especially for electrostatic discharge (ESD) reliability. Few prior arts have indicated that III-V devices are relatively sensitive to ESD events and can be severely destroyed without an effective ESD protection strategy. Traditional ESD protection strategies might induce significant performance degradation on FEMs. Therefore, in-depth understanding of ESD characteristics of III-V devices will be the cornerstone for the optimized ESD protection strategy.
Transmission line pulse (TLP) IV characteristics are used for evaluating ESD robustness of III-V devices in most of the prior arts. However, the 50-Ohm impedance in the TLP system might not be suitable for the GaN devices with a breakdown voltage of few-hundred voltages. Moreover, the detailed transient characteristics cannot be obtained from the general TLP IV results. The transient characteristics can bring more information, such as device turn-on mechanism and the corresponding discharging path under a real ESD event. Appropriate characterization methods are a curial part for the complete insight into the ESD challenges of III-V devices. On the other hand, ESD protections in Si RF FEMs and high-speed I/O interfaces have been considered as one of the most challenging ESD topics in past decade. The effective solutions not only relied on sophisticated co-design skills, but also on the reliable ESD protection devices. Finding reliable III-V devices can be one of the main tasks of ESD protection strategies. Even more, with the co-integration between CMOS and III-V technologies, the heterogeneous ESD protection strategy is feasible and might be a more effective solution to the FEMs in the 5G and beyond 5G mobile applications.
In this post-doctoral program, the fundamental ESD transient characteristics of the III-V devices will be thoroughly investigated with the proper characterization methods. Furthermore, the corresponding ESD protection options in the state-of-the-art co-integrated CMOS and III-V technologies will be evaluated and analyzed. Eventually, the decent ESD protection strategies can be proposed towards the more reliable RF FEMs for 5G mobile handset applications and even beyond.
We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.
We are proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth.
We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a competitive salary with many fringe benefits.
This postdoctoral position is funded by imec through KU Leuven. Because of the specific financing statute which targets international mobility for postdocs, only candidates who did not stay or work/study in Belgium for more than 24 months in the past 3 years can be considered for the position (short stays such as holiday, participation in conferences, etc. are not taken into account).