Post-doctoral Researcher - Electrical Characterization of novel oxide-semiconductor based memory concepts

What the context of this work is

Amorphous metal oxide semiconductors like Indium-Gallium-Zinc-Oxide (InGaZnO) are commonly used in liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays manufacturing thanks to their field-effect mobility (>10 cm2/V·s), good uniformity over large glass substrates sizes, low-temperature process and relatively good bias-thermal stress stability. Besides driving innovative thin-film transistors for display applications, the BEOL-compatibility of oxide semiconductors is a key property to improve system scaling in the semiconductor industry, enabling new solutions for 3D-integration and array stacking. These properties, combined with extremely low leakage currents (down to <10-20 A/µm), open a completely new landscape for novel memory devices, where the scalability and the data retention are dramatically boosted.

We have already demonstrated capacitorless IGZO-based DRAM cells with >400 s data retention, but alternative memory architectures based on oxide semiconductor thin-film transistors (OS-TFT) are being explored to target various applications.
 

What you will do

In this role, you will actively contribute to the development of novel memory architectures within the Memory Device team. Through in-depth electrical characterization, you will aim at understanding the impact of the oxide semiconductor properties on the memory performance, and you will define specific metrics for evaluating the reliability of new memory devices. Thanks to your study, you will propose alternative integration schemes, materials and circuits to improve the performance of OS-TFT based memory architectures. The ideal candidate has a strong experience in Semiconductor device electrical testing, innovative thin-film transistors, and device physics understanding of oxide semiconductors.

What we do for you

We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.

We are committed to being an inclusive employer and proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth. 

We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a competitive salary with many fringe benefits. 

Who you are

• You have obtained a Master degree in Electrical & Electronics Engineering, Semiconductor device Physics, Material Science or related fields, with a PhD in one of the areas
• You have a solid background of electrical engineering. Good knowledge of device physics, technology and lab/fab process is recommended.
• You have strong experience in the electrical characterization of MOSFETs.
• You are a communicative team player, yet you are able to work independently.
• You like taking initiative; you are persuasive and assertive, while keeping a constructive attitude.
• You show the flexibility to change between different projects according to changing priorities.
• Given the international character of imec, a fluent knowledge of English is necessary.