Postdoctoral Researcher EUV photoresist roughness mitigation for advanced logic & memory patterning

Leuven - Research & development
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About a week ago

Design etch processes on the most advanced hardware, characterize your results with state-of-the-art metrology and understand deeply the smoothening mechanisms induced by the interaction of different types of plasma and EUV photoresists.

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Postdoctoral Researcher EUV photoresist roughness mitigation for advanced logic and memory patterning

What you will do

You will explore the most advanced and innovative post-lithography methods (including Atomic Layer Etch and/or Atomic Layer Deposition) to overcome challenges related to EUV-based patterning at tight pitches (below 16nm half-pitch) like LER/LWR and defectivity. Both chemically amplified PR and metal-based PR are considered and the performance of the different patterning approaches will be evaluated step-by-step using top down SEM imaging, cross-section SEM, 2D/3D-AFM, TEM as well as Power Spectral Density (PSD) analysis. Both PR surface and bulk will be characterized pre- and post-plasma treatment using various characterization techniques (few quasi-situ) like FTIR, XPS, Raman, µPL, ellipsometry, DMA, TGA. In the course of project, the next generation EUV scanner with higher numerical aperture (NA) will be installed in IMEC, giving a unique opportunity to combine the most recent lithography system with advanced EUV materials and state-of-the-art etch processes including the access to a cryogenic etch chamber.
The work will be performed in close collaboration with device and material scientists from IMEC, partnering academic laboratories like LTM/CNRS and CEA/LETI as well as material and tool suppliers. The projects benefit from the unique and complementary experimental resources of the 3 partners allowing to address the different issues raised in the project.

  • Explore and improve the most innovative smoothening approaches using advanced ALD/ALE techniques
  • Characterize your results by mean of complementary characterization methods
  • Understand all smoothening mechanisms at play in the nanometer volume of the state-of-the-art EUV photoresists
  • Explore the effect of the temperature using cryogenic etch technique
  • Apply and study the most successful approach to the next generation high-NA EUV photoresists

What we do for you

We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.
We are proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth.
We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a competitive scholarship.

Who you are

You must have excellent hands-on skills, have basic knowledge in material science, chemistry, etch, lithography, metrology. The post-doc candidate must enjoy working in a team while showing autonomy, rigor and dynamism. The post-doc candidate must be able to synthesize his work and promote it through publications and conferences. The post-doc candidate must be open to travelling abroad to perform some experimental work. A good English level is a must.

This postdoctoral position is funded by imec through KU Leuven. Because of the specific financing statute which targets international mobility for postdocs, only candidates who did not stay or work/study in Belgium for more than 24 months in the past 3 years can be considered for the position (short stays such as holiday, participation in conferences, etc. are not taken into account).

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