Electrical Study of Highly scaled IGZO transistors for memory applications
What you will do
Amorphous metal oxide semiconductor like Indium-Gallium-Zinc-Oxide (InGaZnO) is the most commonly used oxide material in liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays manufacturing due to their field-effect mobility >10 cm2/V·s, good uniformity over large glass substrates sizes, low temperature process and relatively good bias-thermal stress stability. Besides driving innovative thin-film transistors for display applications, InGaZnO is also seen as a premium material to help the semiconductor industry to further improve system scaling like placing the transistors in the Back-End-Of-Line of a chip rather than in the periphery. Very importantly, because of their extremely low leakage current and relatively good carrier mobility, IGZO-based transistors can make nonvolatile memories more power-efficient while maintaining the data writing and reading at very high speed. Integration of such material in DRAM cell architecture opens the possibility of 3D DRAM integration, which helps to continue the DRAM scaling road map.
In this job, you will actively contribute to the development of IGZO-based Thin-Film Transistors within the Memory Device team. Through in-depth electrical characterization, you will aim at understanding the physical effects driving the electrical parameters of IGZO-TFTs, i.e. threshold voltage, ON current, Subthreshold Swing, etc. Thanks to your study, you will propose alternative integration schemes and materials to improve the performance of IGZO-based TFTs in view of the memory device implementation. The ideal candidate has a strong experience in Semiconductor device electrical testing, innovative thin-film transistors, and device physics understanding of amorphous semiconductors.
Experience in TCAD simulations will be a plus.
What we do for you
We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.
We are proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth.
We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a competitive scholarship.
Who you are
- You have obtained a Master degree in Electrical & Electronics Engineering, Semiconductor device Physics, Material Science or related fields, with a PhD in one of the areas
- We are looking for your background of electrical engineering. Good knowledge of device physics, technology and lab/fab process is recommended.
- We need your strong experience in the electrical characterization of MOSFETs.
- You are a communicative team player, but still you able to work independently.
- You like taking initiative; you are persuasive and assertive, while keeping a constructive attitude.
- We value your flexibility to change between different projects according to changing priorities.
- Given the international character of imec, a fluent knowledge of English is necessary.
This postdoctoral position is funded by imec through KU Leuven. Because of the specific financing statute which targets international mobility for postdocs, only candidates who did not stay or work/study in Belgium for more than 24 months in the past 3 years can be considered for the position (short stays such as holiday, participation in conferences, etc. are not taken into account).