Process Integration Engineer GaN-IC Power Electronics Technology
What you will do
While today’s GaN power devices are offered as discrete off‐the‐shelf components for various voltage and current ranges, the full potential of the technology is not exploited. Reason for this is that the devices are not customized to the application and the use of discrete components introduces interconnection parasitics that prohibits the switching at highest commutation speed.
Especially the transient signals at the gate are a real concern. GaN power devices being lateral HEMTs and lateral Schottky diodes, offer an opportunity for co‐integration, e.g. on an SOI substrate, of the power switching HEMTs, clamping and free‐wheeling diodes, depletion mode analog devices for monitoring circuits, and GaN driver stages. However, the co‐integration also introduces specific concerns for the performance optimization of the devices. This is because compromises must be made for the selection of the common polarization layer, passivation dielectrics and intermetal dielectrics below the field plates.
As a process integration engineer, you will develop the process flow for the realization of the co‐integration of diodes, depletion mode and enhancement mode HEMT devices in the GaN ICs platform. You will be embedded in the GAN-IC team, discuss the electrical data with the device and characterization engineer to help defining new learning cycles for the optimization of the technology.
What we do for you
We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.
We are proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth.
We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a competitive salary with many fringe benefits.
Who you are
- You have a PhD in Electronics Engineering
- You have a background in Semiconductor Process Technology. Having a background specifically in GaN Power Electronics is certainly a plus.
- You are able to take initiative and work independently, while being part of a team acting as an effective team player.
- You are enthusiastic, you take responsibility and ownership
- Since you will be working in a highly international environment and will be maintaining a good contact with colleagues and customers, fluency in English is essential.