CMOS and beyond CMOS
Discover why imec is the premier R&D center for advanced logic & memory devices. anced logic & memory devices.
Connected health solutions
Explore the technologies that will power tomorrow’s wearable, implantable, ingestible and non-contact devices.
Life sciences
See how imec brings the power of chip technology to the world of healthcare.
Sensor solutions for IoT
Dive into innovative solutions for sensor networks, high speed networks and sensor technologies.
Artificial intelligence
Explore the possibilities and technologies of AI.
More expertises
Discover all our expertises.
Be the first to reap the benefits of imec’s research by joining one of our programs or starting an exclusive bilateral collaboration.
Build on our expertise for the design, prototyping and low-volume manufacturing of your innovative nanotech components and products.
Use one of imec’s mature technologies for groundbreaking applications across a multitude of industries such as healthcare, agriculture and Industry 4.0.
Venturing and startups
Kick-start your business. Launch or expand your tech company by drawing on the funds and knowhow of imec’s ecosystem of tailored venturing support.
/Job opportunities/Quantifying ion concentration & electronic defects in PeLEDs

Quantifying ion concentration & electronic defects in PeLEDs

Research & development - Leuven | More than two weeks ago

Contribute to a first-ever demonstration of a perovskite-based injection laser leading to variety of applications

Metal halide perovskite semiconductors have recently emerged as an exciting material system for optoelectronics devices such as solar cells, light-emitting diodes, and photodetectors. Perovskite light-emitting diodes (PeLEDs) have witnessed a remarkable success in the recent years, achieving external quantum efficiencies of more than 20% and half-lifetimes > 100 h, bringing them closer to more mature thin-film devices based on organic semiconductors and core-shell quantum dots. The rapid progress in these devices is due to their unique properties such as high carrier mobility, high photoluminescence quantum yield, and facile processing techniques, etc. In the ULTRA-LUX project, we aim to demonstrate a perovskite-based injection laser, a breakthrough that will lead to many applications such as on-chip light sources integrated into common CMOS photonic platforms, Lab-on-a-Chip devices, and advanced spectroscopy.

An interesting aspect of metal halide perovskites is their mixed ionic-electronic conduction. Due to the low ion activation energy, especially the halide species, ions migrate under the influence of electric field, which leads to different anomalous observations in their current-voltage (IV) characteristics. Ion migration has also been shown to play an important role in the device stability. Despite extensive research, ion migration remains far from being fully understood in the scientific community. To this end, understanding the role of ions in our PeLEDs is of primary importance to the project. The student will study different PeLED structures using techniques like impedance spectroscopy and transient ion drift. The student will extract important parameters such as ion activation energy and diffusion constant. Moreover, the dependence of these parameters on different structures and device stacks will be investigated.




  1. Design the experimental setup using LabView or Python.
  2. Do the experiment on predesigned and fabricated structures.
  3. Analyze the data and build a concrete understanding of device operation and compare with literature.


The objectives and the approach can be tailored to the student’s interest and expertise. The student will benefit from the support of a multi-disciplinary collaborative team of PhD students, Postdocs, senior researchers, and Professors. The project is expected to help the student acquire different skills which are useful for further academic work or for the job market. If the results are beyond state of the art, this work has the potential to contribute to a high-quality scientific publication.


The student is expected to be a self-driven and motivated individual, willing to tackle different tasks and learn new skills to achieve his objectives. The student should also be a team-player and willing to communicate in meetings and report on the progress. Knowledge of semiconductor devices and physics is highly recommended.

Type of project: Internship, Thesis

Duration: 6-9 months

Required degree: Master of Science, Master of Engineering Technology, Master of Engineering Science

Required background: Nanoscience & Nanotechnology, Physics, Electrotechnics/Electrical Engineering

Supervising scientist(s): For further information or for application, please contact: Karim Elkhouly (

Imec allowance will be provided for students studying at a non-Belgian university.