PhD - Leuven | More than two weeks ago
Towards fault tolerant qubit devices
Imec is currently investing heavily into exploratory and emerging materials like topological insulators (TI) which could potentially enable a large variety of new functionalities especially towards fault tolerant qubits for quantum computing applications. There is a strong need to better understand and control of these emerging materials as well as explore new device schemes.
In the PhD-project proposed here, we want to realize Majorna-based qubit devices based on epitaxial oxide based heterostructures. The materials of interest are Bismuth-based perovskites which can be grown on various substrates such as MgO(001), SrTiO3(001) and Si(001) by mean of Molecular Beam Epitaxy (MBE) technique. The key role of this PhD position will be to study the topological insulating and superconducting properties of the thin films by low temperature transport measurements together with the interpretation of experimental results. The ultimate goal of this research is the demonstration of fault tolerant Majorana-based qubit device. The research will be strongly linked to the modeling project on exploratory topological insulator materials supported by experts from different domains in imec and KU Leuven.
The PhD candidate is expected to:
Required background: The candidate PhD student has a solid background in quantum engineering and electrical/magnetic characterizations techniques. He/she has a strong affinity for quantum computing technologies and a keen interest in quantum physics and devices. The research will be supported and guided by several experts from different domains in imec. It is part of the plan to realize fault tolerant qubit devices (NOTICE project) funded by the ERC Consolidator Grant.
Type of work: 40% experimental work, 50% characterizations, 10% literature study
Supervisor: Stefan De Gendt
Co-supervisor and daily advisor: Clement Merckling
The reference code for this position is 2021-142. Mention this reference code on your application form.