/Researcher III-N MOCVD

Researcher III-N MOCVD

Research & development - Leuven | More than two weeks ago

You are member of the epitaxy research group (EPI), which is responsible for developing growth processes in close collaboration with imec’s device integration departments. You work in a cross-functional team of about 15 people with whom you interact frequently. You will work in a dynamic multidisciplinary and multicultural environment in close cooperation with researchers, process and hardware engineers, industrial assignees, and device experts.

Researcher III-N epitaxy by MOCVD

What you will do

You are member of the epitaxy research group (EPI), which is responsible for developing growth processes in close collaboration with imec’s device integration departments. You work in a cross-functional team of about 15 people with whom you interact frequently. You will work in a dynamic multidisciplinary and multicultural environment in close cooperation with researchers, process and hardware engineers, industrial assignees, and device experts.

As a Researcher on Epitaxial growth, you will be responsible for MOCVD processes of III-N materials. Primarily, you are responsible for developing the processes that are required by imec’s programs or customers. 

More specifically, you will:

  • Define, organize, and validate process developments for the epitaxial growth of III-N materials and look for specific integration solutions. 
    • Identify process requirements and development opportunities,
    • Timely execute process optimisation and development projects,
    • Actively contribute to the research programs and joint development programs with external partners,
    • Share and discuss your results at team and program meetings,
    • Perform material and electrical characterizations of the grown layer stacks,
    • A big part of your practical work will be in the cleanroom.
  • Transfer the optimised processes our industrial partners (“tech transfers”) or to the engineering support and operational teams (“line releases”).
    • This includes documenting the processes, giving classroom and field trainings, and supporting the industrial partners or engineering support during their initial ramp up phase.
  • Monitor industry trends and innovations, applying scientific knowledge and adapting to imec research programs and activities. Interface with device researchers to identify the future needs and trends.
  • Provide fundamental understanding on the physical and chemical processes that govern the growth dynamics of III-N materials on blanket Si substrates or patterned device wafers.
    • Report about your work to industrial partners, on international conferences, publish key results in scientific journals and turn new ideas into IP.
  • You will be coached on-the-job by a senior III-N MOCVD scientist. 

What we do for you

We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.

We are committed to being an inclusive employer and proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth. 

We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a market appropriate salary with many fringe benefits. 

Who you are

  • You have a PhD in Physics, Material Science or similar. Hands-on experience in epitaxial growth of III-V materials by MOCVD is a must, preferably of GaN based materials.
  • You are an enthusiastic and creative team player with strong networking, communication and reporting skills who likes to work in a multicultural team of imec researchers, PhD students and industrial researchers and will have frequently interactions with clients. 
  • You have project management skills and a strong capability to work independently with a focus on quality for your deliverables. 
  • You are working autonomously, well-organized, with a good attention to details and you set high standards in everything you do. 
  • You are interested in working hands-on in a clean room environment.
  • Given the international character of imec, good knowledge of (spoken and written) English is a must.

Context

The MOCVD technology is used at imec to epitaxially grow AlGaN/GaN based materials for power and RF transistors because of their higher critical electric field for breakdown and faster switching speed. It is expected that a significant power saving will be realized over the conventional Si power devices, thus contributing to the overall energy efficiency of power supplies, photovoltaic inverters, and many other power systems.

Key to all these applications is the growth of the GaN hetero structures on 200 mm Si, using metalorganic vapour phase epitaxy (MOVPE, also known as MOCVD).

To reinforce imec’s R&D in this field, we are looking for a hands-on (m/f) Researcher in III‑N epitaxy by MOCVD, which is eager to contribute to this technological challenge.