Flexible thin-film electronics is a relatively young discipline compared to the standard electronics developed on monocrystalline Si substrates. Nonetheless, in recent years, this technology has experienced many advancements, especially in areas where the intrinsic rigidity and size of Si chips impede their use. InGaZnO thin-film transistors (IGZO TFTs) are amenable to direct fabrication on polyimide (PI) as flexible substrate and have received significant attention for displays, large-area imagers and radio frequency identification (RFID) smart tags.
However, one of the most important specifications for a flexible RFID transponder chip still missing today is an electrically re-programmable memory array. Resistive Random Access Memory (RRAM) is a promising candidate for integration into large-area flexible electronic platforms due to its structural simplicity, fabrication temperatures that are suitable for direct material deposition on the plastic foil and good performance.
This internship topic concerns electrical characterization of novel memory devices consisting of monolithically integrated IGZO TFT-RRAM cells. These memory cells are fabricated in thin-film technology by a direct material deposition on top of the flexible PI substrate. The aim of this project is to gain understanding of the device physics and operation, determine trade-offs and optimize the programming and read conditions to achieve the best performance these devices can offer. The final goal of the internship is the characterization of the full memory matrix.
- Motivated, independent, creative
- Experienced with electrical measurements in a lab
- Capable of analyzing big sets of data using Matlab, Python, Origin...
Type of project: Internship
Duration: 6 months
Required degree: Master of Engineering Technology, Master of Science, Master of Engineering Science
Required background: Electrotechnics/Electrical Engineering, Nanoscience & Nanotechnology
Imec allowance will be provided