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/Job opportunities/Single Carrier Perovskite Devices Characterization and Modeling

Single Carrier Perovskite Devices Characterization and Modeling

Research & development - Leuven | More than two weeks ago

Contribute to a first-ever demonstration of a perovskite-based injection laser leading to variety of applications

Metal halide perovskite semiconductors have recently emerged as an exciting material system for optoelectronics devices such as solar cells, light-emitting diodes, and photodetectors. Perovskite light-emitting diodes (PeLEDs) have witnessed a remarkable success in the recent years, achieving external quantum efficiencies (EQE) of more than 20% and half-lifetimes > 100 hat a current density of 100 mA/cm2, bringing them closer to more mature thin-film devices based on organic semiconductors and core-shell quantum dots. The rapid progress in these devices is due to their unique properties such as high carrier mobility, high photoluminescence quantum yield, facile processing techniques, etc. In the ULTRA-LUX project, we aim to demonstrate a perovskite-based injection laser, a breakthrough that will lead to many applications such as on-chip light sources integrated into common CMOS photonic platforms, Lab-on-a-Chip devices, and advanced spectroscopy.

The electrical characteristics of perovskite light emitting diodes remain far from being understood. The issue of electron/hole charge balance remains critical to achieve high EQEs in PeLED stacks. To this end, the student will initially do electrical characterizations for PeLED devices. To further disentangle the electron and hole transport, the student will characterize electron devices and hole-only devices. Based on these experimental measurements, a model will be implemented to explain the device performance. The characterizations will be done with PAIOS tool, a high-end characterization tool for thin-film optoelectronic devices []. The simulations will be done with SETFOS simulation software which is coupled to PAIOS.




  1. Analyze transport in PeLEDs & single carrier devices using PAIOS.
  1. Model these devices in SETFOS.
  2. Re-iterate the single carrier device design.
  3. Based on this understanding, conceptualize improvements for the PeLED stack.


The objectives and the approach can be tailored to the student’s interest and expertise. The student will benefit from the support of a multi-disciplinary collaborative team of PhD students, Postdocs, senior researchers, and Professors.  If the results are beyond state of the art, this work has the potential to contribute to a high-quality scientific publication.


The student is expected to be a self-driven and motivated individual, willing to tackle different tasks, and learn new skills to achieve his objectives. The student should also be a team-player and willing to communicate in meetings and report his progress. Knowledge of semiconductor devices is highly recommended.

Type of project: Thesis, Internship

Duration: 6-9 months

Required degree: Master of Engineering Technology, Master of Science, Master of Engineering Science

Required background: Nanoscience & Nanotechnology, Physics, Electrotechnics/Electrical Engineering

Supervising scientist(s): For further information or for application, please contact: Karim Elkhouly (

Imec allowance will be provided for students studying at a non-Belgian university.