Leuven | More than two weeks ago
Advanced MRAM and spin-logic devices rely on magnetic layers, namely CoFeB, which are carrying logic information. These layers are extremely thin (few nanometers) and, essentially, their properties are driven by interfaces with the surrounding layers. In specific cases, it is required to locally modify the magnetic properties of the CoFeB, to allow for the device to work properly. Also, the CoFeB layer, being very thin, prone to oxidation, is very sensitive to external factors such as the ambient.
In this internship, we will study the impact of various processing treatments on the magnetic, structural and chemical characteristics of CoFeB thin films. Plasma and gas-phase reactants will be studied. We will discriminate the effect of amorphization by non-reactive gases, chemical modifications by reactive radicals and (V)UV photons. The role of storage conditions, passivation layers, will be also studied in detail. Possibly, restoration approaches will be explored. The quality of the CoFeB layers will be studied by means of AFM, spectroscopic ellipsometry, water contact angle, X-ray reflectometry, vibrating sample magnetometry (VSM) but also XPS and Tof-SIMS. The long-term objective is to establish a link between the physico-chemical properties of the CoFeB layer and the changes induced on their magnetic properties. The short-term objective is to establish a correlation between different processing and the obtained magnetic properties.
Type of project: Combination of internship and thesis, Thesis, Internship
Duration: 4 months minimum, 18 months maximum
Required degree: Master of Science, Master of Engineering Technology, Master of Engineering Science
Required background: Chemistry/Chemical Engineering, Materials Engineering, Physics
Supervising scientist(s): For further information or for application, please contact: Jean-Francois de Marneffe (Jean-Francois.deMarneffe@imec.be)
Imec allowance will be provided for students studying at a non-Belgian university.