Spin orbit torque induced magnetic domain wall motion in synthetic antiferromagnetic materials for spin logic application

More than two weeks ago

Exploring advanced spintronic devices for beyond-CMOS technology

Spin logic devices based on magnetic domain wall (the boundary between two magnetic domains with opposite magnetization direction) motion are the potential candidates to continue scaling down the integrated circuit and circumvent the limitation of current CMOS technology related to power dissipation at low dimension. In such devices, the logic information is encoded in the position of a domain wall (DW) while its motion is employed to perform the logic functionalities. Therefore, understanding the dynamics behavior of DW motion and controlling DW speed are critical as it essentially relates to the operational speed of the logic devices. Recently, the discovery of extremely fast current induced DW motion in the synthetic antiferromagnetic (i.e., two thin ferromagnetic layers are antiferromagnetically coupled through a metallic spacer) offers a route towards the realization of spin logic devices. The presence of the interfacial Dzyaloshinskii–Moriya interaction (DMI), the spin orbit torque (SOT) originating at the interface of heavy metal and ferromagnetic layer and the exchange coupling torque due to the antiferromagnetic configuration are mainly responsible for the high DW speed this material. The remarkable feature of synthetic antiferromagnetic material for the spin logic devices is also linked to the special properties as robust against perturbation of external field, produce no stray fields compared to conventional ferromagnetic counterpart. The goal of this internship will study the dynamics of DW motion in synthetic antiferromagnetic materials with perpendicular magnetic anisotropy in order to achieve fast and reliable SOT induced DW motion for spin logic application. The student will participate to fabricate spin logic devices, from micro-down to the nanoscale using cleanroom facilities at IMEC. Magnetic field and SOT-driven DW motion will be studied using magneto-transport measurements and magnetic imaging techniques as Kerr microscopy, magnetic force microscopy. A part of the experimental works will be performed in close collaboration with the laboratory in France. The student should have a strong interest in nanofabrication in a cleanroom environment as well as in leading edge research topics on magnetism and magnetic materials.

Type of project: Internship, Combination of internship and thesis, Thesis

Supervising scientist(s): For further information or for application, please contact: Van Dai Nguyen (Van.Dai.Nguyen@imec.be) and Eline Raymenants (Eline.Raymenants@imec.be)

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