Underlayer hardening to improve high-resolution patterning performance for EUV lithography

In this internship project,  the candidate will get familiar with the concepts of lithography and understand how physical/chemical factors in the underlayer and photoresist film can influence patterning performance. The candidate will prepare thin film samples of underlayer/photoresist and treat them with post coating knobs to induce changes in material chemistry. Different characterization tools (such as ellipsometry, FTIR spectroscopy, patterned wafer geometry, nanoindentation technique, scanning electron microscope) will be applied to then correlate changes in underlayer chemistry to patterning data.

The candidate will be trained on state-of-the-art lithography and characterization tools and hence be receptive and motivated to work in a high-tech environment. After the training period, the candidate should be able to work independently and derive meaningful results by analyzing big sets of data. An academic background in chemistry, materials science, or nanotechnology will be preferable. At the end of the internship period, the candidate is also expected to present his/her findings as a written thesis and/or in the form of an imec internal dissertation.