PhD - Leuven | More than two weeks ago
Where reliability meets physics
Optical receivers based on high opto-electrical bandwidth, high responsivity and low dark current germanium photodetectors, substantially enhance the performance of Si-based optical interconnects, where the performance of these Ge waveguide p-i-n photodetectors have been boosted by recent achievements in the epitaxial growth of Ge on Si.
During operation, at use conditions, Ge photodetectors are being supplied with a bias-voltage in reverse mode, where their dark current needs to remain low, to ensure a high signal-to-noise ratio. The degradation mechanisms that drive the increase of dark current are very complex, especially for devices with geometries leading to local field enhancements, in critical regions of the device; the so-called Avalanche-Photodetectors are a key example.
The understanding of the conduction and degradation mechanisms of such Ge photodetectors is the main topic of this PhD-study. Questions like:
will need to be addressed.
Required background: Material Science, Physics or Electrical Engineering
Type of work: 10% Literature review, 40% TCAD simulations + transport simulations 50% Experimental
Supervisor: Ingrid De Wolf
Co-supervisor: Kristof Croes
Daily advisors: Jacopo Franco and Artemisia Tsiara
The reference code for this position is 2021-136. Mention this reference code on your application form.