Internship/thesis - Leuven | More than two weeks ago
Performing noise-stress-noise measurements up to hard-breakdown, enabling the development of an alternative dielectric lifetime prediction methodology using 1/f noise
Dielectric breakdown phenomena are one of the main failure mechanisms responsible for the reliability degradation of state-of-the-art semiconductor devices. The routine method to study these failures is via Time-Dependent Dielectric Breakdown (TDDB). In TDDB, higher-stress experimental data is used to predict the behaviour of the dielectric at lower-stress conditions, using an extrapolation procedure. A limitation of this approach is the lack of physical insights. One can also question the validity of the extrapolation which, in many cases, cannot be justified.
In this project, we explore an alternative method, based on 1/f noise, to obtain the same information as TDDB, in a faster and less destructive manner. The 1/f noise method examines the microscopic fluctuations arising in the dielectric leakage current. These fluctuations are due to crystallographic vacancies or ‘traps’, which continually and randomly modulate the precise value of the current flowing through the dielectric. These fluctuations are expected to contain valuable information on the physics of dielectric breakdown. This alternative 1/f noise approach can then be used to complement TDDB, in order to acquire a fundamental understanding of the dielectric’s behaviour at both higher- and lower-stress conditions.
Type of work: 50 % experimental, 30 % data analysis, 20 % interpretation
Language requirements: English
Type of Project: Internship
Bachelor's program/required background: Physics, Electrical Engineering, Nanotechnology, Materials Science, Materials Engineering