Imec takes today’s gallium nitride-on-silicon (GaN-on-Si) technology to a higher level of maturity and reliability, and explores new concepts for next-generation GaN technology.
We have been pioneering GaN technology for more than 15 years, evolving 200mm/8-inch wafers to realize GaN-on-Si devices at lower costs while maintaining world-class performance. Our research covers GaN epitaxy as well as device engineering and processing technology.
Anticipate what will be next by joining our GaN industrial affiliation program and become a member of our partner ecosystem to explore and de-risk next-generation GaN epitaxy, integration and device technologies (substrates, isolations and novel devices) with the possibility of extending the application voltage range of GaN beyond 650V.
We also provide a dedicated package for technology transfer to shorten your time-to-market, or help you to develop a solution tailored to your needs using our state-of-the-art Au-free CMOS compatible 200mm GaN-on-Si technology platform for 200V and 650V (e-mode) power devices. Our platform is also available for low-volume production.
Our GaN technologies include:
Dispersion-free GaN buffers
Imec develops 200V and 650V GaN buffers on top of 200mm/8-inch substrates and qualifies them on the power device level
State-of-the-art GaN power devices
Next-generation GaN technologies
Explore imec’s innovation in next-generation GaN technologies with extended voltage ranges.
Hoe kunnen we u helpen?
Some examples of what we have done
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What can we do for you?
We have unique cleanroom facilities including a state-of-the-art, Au-free, CMOS compatible, 200mm GaN-on-Si technology platform for 200V and 650V power devices.
Our industrial affiliation program (IIAP) connects you with imec’s global partner ecosystem, enabling you to share costs and lower risk through collaborative and precompetitive research.
Our expertise enables us to develop a solution tailored to your needs. We also accommodate the low-volume production of your device.
Why work with us?
- Our research is based on a strong synergy between epitaxy, process integration, device technology and simulation
- We have an excellent track record in GaN-on-Si power devices with state-of-the-art d-mode (depletion mode) and e-mode (enhancement mode) power devices.
- Our research is founded on high-quality 200mm/8-inch wafers with GaN power electronics featuring buffer layers with a high-breakdown voltage.