Imec takes today’s gallium nitride-on-silicon (GaN-on-Si) technology to a higher level of maturity and reliability, and explores new concepts for next-generation GaN technology. 

We have been pioneering GaN technology for more than 15 years, evolving 200mm/8-inch wafers to realize GaN-on-Si devices at lower costs while maintaining world-class performance. Our research covers GaN epitaxy as well as device engineering and processing technology. 

Anticipate what will be next by joining our GaN industrial affiliation program and become a member of our partner ecosystem to explore and de-risk next-generation GaN epitaxy, integration and device technologies (substrates, isolations and novel devices) with the possibility of extending the application voltage range of GaN beyond 650V.  

We also provide a dedicated package for technology transfer to shorten your time-to-market, or help you to develop a solution tailored to your needs using our state-of-the-art Au-free CMOS compatible 200mm GaN-on-Si technology platform for 200V and 650V (e-mode) power devices. Our platform is also available for low-volume production.

Our GaN technologies include:

Dispersion-free GaN buffers

Imec develops 200V and 650V GaN buffers on top of 200mm/8-inch substrates and qualifies them on the power device level

State-of-the-art GaN power devices

Imec develops large area, high-performance, large threshold voltage (>2V) e-mode high-electron-mobility transistors (HEMTs) and low-leakage/low-turn-on voltage Schottky diodes.

Next-generation GaN technologies

Explore imec’s innovation in next-generation GaN technologies with extended voltage ranges.

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What can we do for you?

  • We have unique cleanroom facilities including a state-of-the-art, Au-free, CMOS compatible, 200mm GaN-on-Si technology platform for 200V and 650V power devices.

  • Our industrial affiliation program (IIAP) connects you with imec’s global partner ecosystem, enabling you to share costs and lower risk through collaborative and precompetitive research.

  • Our expertise enables us to develop a solution tailored to your needs. We also accommodate the low-volume production of your device.

Why work with us?

  • Our research is based on a strong synergy between epitaxy, process integration, device technology and simulation
  • We have an excellent track record in GaN-on-Si power devices with state-of-the-art d-mode (depletion mode) and e-mode (enhancement mode) power devices.
  • Our research is founded on high-quality 200mm/8-inch wafers with GaN power electronics featuring buffer layers with a high-breakdown voltage.

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