200mm/8-inch GaN-on-Si epitaxy is challenging and requires carefully-designed buffers for stress engineering to enable high breakdown voltage and avoid formation of cracks and slip line. Next to this, the buffer needs to be dispersion free.
With more than 3,000 200mm GaN-on-Si wafers processed per year, we explore and optimize buffer architectures for 200mm/8-inch GaN-on-Si epitaxy. Our state-of-the-art dispersion free buffers feature excellent surface morphology, good reproducibility, is dispersion free and has low vertical leakage current both at RT and at 150C.
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Some examples of what we have done
At imec bright people build a bright future.
You could be one of these builders. Whether you are an engineer or an operator, a consultant or PhD student, we need a versatile group of people to help us create positive change.Join the forward thinkers
PhD researcher on high capacity Li-ion micro-batteries
PhD researcher on nanocomposite solid electrolytes for Li-ion batteries
Als SEM/Metrology Technician ben je verantwoordelijk voor de eerstelijns ‘troubleshooting’ (lot, proces en hardware gerelateerde problemen) binnen de metrologie area.
Post-doc position on emerging technologies for Internet of Things (IoT) networking
For further development of the IDLab wireless research cluster, we are looking for a post-doctoral researcher in the broad domain of wireless communications and networking for Internet of Things.Meer jobs bekijken