State-of-the-art GaN power devices


We develop large area, high-performance, large threshold voltage (>2V) normally-off e-mode high-electron-mobility transistors (HEMTs) as well as low-leakage/low-turn-on voltage Schottky diode technology which is Au free and CMOS compatible.

We also make NO2 sensors and, thanks to a 200mm/8-inch GaN-on-Si substrate with low RF losses, we enable GaN-based RF devices.

Normally-off (e-mode) technology

Use our 8-inch/200mm Au-free CMOS compatible GaN power device platform to develop and manufacture your state-of-the-art normally-off/e-mode (VTH>2V) and Schottky diode technology for power switching applications. 

Low-leakage/low-turn-on voltage Schottky diode technology

Thanks to our proprietary Gate Edge Termination (GET) technology, our 200mm GaN-on-Si diode technology achieves low leakage current and low turn on voltage at the same time.

Our Schottky diodes reach forward and reverse specifications across the full temperature range, spanning from 25˚C till 150˚C with a tight distribution.

Collaboration opportunity

Engage with imec to absorb our technology or partner with us to tune our technology according your specific needs. We also offer low volume manufacturing of your tailored solution.

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