State-of-the-art imagers use silicon circuitry for pixel readout, in combination with either a silicon absorber (visible region) or flip-chip bonded III-V materials (infrared region). Organic and quantum-dot semiconductors, on the other hand, have extremely high absorption coefficients, and can therefore be used to make extremely thin photodetectors. Furthermore, depending on the semiconductor material, the spectral range that can be absorbed can be selected, ranging from visible over near-infrared to short-wave infrared. These characteristics are promising for future image sensors with super-high resolution and multi-spectral sensitivity. We intend to integrate such novel thin photodetectors on silicon read-out chips.
The purpose of this PhD is to research devices for scaled multi-spectral thin-film imagers. The thin-film semiconductors are deposited from either solution (polymer semiconductors, or colloidal quantum dots) or by evaporation (stacks of organic small molecules). The full stack will be defined by the optical and electrical properties of each layer, as well as the process limitations inherent to stacking of thin films. This PhD therefore has two important pillars: 1) optical and electrical simulations of the full layer structure, and 2) process development to realize complex stacks with high performance for the relevant performance parameters of photo-detection. The PhD student will be involved in the entire fabrication cycle (design, processing and characterization) performed in the state-of-the-art facilities including imec's cleanroom and dedicated thin-film labs.
You are a highly motivated recent graduate holding a master's degree in nano-engineering, physics, material science, electrical engineering, or related. You have an interest in the processing of thin-film semiconductors, optical effects in such layers, and electrical and optical characterization. You will be expected to work safely in a cleanroom environment and acquire processing and lab skills. It is expected that you will present results regularly. You are a team player and have good communication skills as you will work in a multidisciplinary and multicultural team spanning several imec departments. Given the international character of imec, an excellent knowledge of English is a must.
Required background: nano-engineering, physics, materials science or electrical engineering with strong affinity for device physics
Type of work: 10% literature study, 30% modeling, 10% design, 30% processing, 20% characterization
Supervisor: Paul Heremans
Daily advisor: David Cheyns
The reference code for this position is 1812-81. Mention this reference code on your application form.