Co-integration of IIIV-HBT on Si platform for RF applications

Leuven - PhD
Meer dan twee weken geleden

III-V RF on Silicon platform


Topic description:

In recent years, a continuous drive to integrate heterogeneous technologies on a common platform has emerged in view of applications such as 5G communications, internet of things (IOT). One of the example of heterogeneous integration is integration of the RF technology with the digital logic technology. Traditionally, logic and RF integrated circuits have been implemented on separate platforms. Logic circuits have been implemented on Si substrates, whereas RF circuit are implemented on IIIV substrates. Logic circuits are benefitted from high volume and relatively low cost production which is enabled by a large sized Si substrate. Whereas RF circuits are benefitted from the high mobility offered by IIIV substrates. However, such RF circuits suffer from low volume of production due to expensive and smaller size of the substrates. A heterogeneous integration scheme would offer us best of the both worlds, low cost and high performance.

Integration of IIIV semiconductors on Si, however, is a challenging task. Several challenges need to be tackled before such an integration can be feasible. In this PhD work you will be working on multiple aspects of heterogeneous integration such as device fabrication, characterization and analysis. You will be working with a team of experts in providing innovative solutions for integration of heterojunction bipolar transistors (HBTs). Your daily activities will involve fabrication of one or more type of devices and test structures in IMEC's clean room lab environment. You will use IMEC's state of the art physical and electrical characterization setups to develop understanding on behavior of IIIV devices upon integration on Si platform.

During this PhD you get an opportunity to develop several skills involved in fabrication of IIIV RF devices, integration, physical and electrical characterization.

Our expectations: semiconductor device physics background, willingness to pick up diverse skills, hardworking, curious in nature, and hands on practical experimental experience is required, experience in physical (e.g. SEM inspections) and electrical characterization is a plus.

Required background: Electrical/Electronics/Nano-electronics Engineering, Engineering Physics, Material Science

Type of work: 70% Experimental, measurement and characterization, 10% Literature, 20% Modeling

Supervisor: Marc Heyns

Daily advisor: Amey Walke

The reference code for this position is 1812-35. Mention this reference code on your application form.


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